DIODES INCORPORATED This new generation MOSFET is designed to minimize the on-stateresistance (RDS(ON)) yet maintain superior swi

DMN6140L-13

instock

DMN6140L-13

INR 11

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UTC The UTC UM66TXXL series are CMOS LSI designed for using in door bell, telephone and toy application. It is an

UM66T19LK-1 TO92 UTC

instock

UM66T19LK-1 TO92 UTC

INR 5

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NCE POWER The NCE6080K uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. It

NCE6080K 10A 10V NCE N-Channel Enhancement Mode Power MOSFET

instock

NCE6080K 10A 10V NCE N...

INR 7

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NCE POWER The NCE6050KA uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. It

NCE6050KA 10V 50A N-Channel Power MOSFET NCE POWER

instock

NCE6050KA 10V 50A N-Ch...

INR 7

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NCE POWER The NCE3050K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It

NCE3050K TO-252 N-Channel NCE POWER

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NCE3050K TO-252 N-Chan...

INR 3.5

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NCE POWER The NCE01P13K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It

NCE01P13 -13A -10V P-Channel TO-252 NCE POWER

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NCE01P13 -13A -10V P-C...

INR 8

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Texas Instruments The TPS22965x is a single channel load switch thatprovides configurable rise time to minimize inrushcurrent.

TPS22965DSGR Power Switch/Driver 1:1 N-Channel 6A 8-WSON (2x2)

instock

TPS22965DSGR Power Swit...

INR 0 INR 0

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RENESAS The HIP4082 is a medium frequency, medium voltageH-Bridge N-Channel MOSFET driver IC, available in 16 leadpl

HIP4082IPZ 80V, 1.25A Peak Current H-Bridge FET Driver N-Channel

instock

HIP4082IPZ 80V, 1.25A P...

INR 80

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Diodes incorporated The AP3032 is an inductor-based DC/DC boostconverter designed to drive up to 4 rows of LEDswith 7 series for

AP3032KTR SOT-23-6

instock

AP3032KTR SOT-23-6

INR 8

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WUXI NCE POWER CO,LTD The NCE3008Y uses advanced trench technology to provide excellent RDS(ON), low gate charge .This device is sui

NCE3008Y, WUXI NCE POWER CO,LTD, SOT23-3L, 30 V, 8 A

instock

NCE3008Y, WUXI NCE POWE...

INR 3

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Silan Microelectronics SD6835 is current mode PWM+PFM controller used for SMPS with built-in high-voltage MOSFET and external sense r

SD6835, Silan Microelectronics, 650V 7A, DIP‑8

instock

SD6835, Silan Microelec...

INR 13

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Texas Instruments MOSFETs 60V N-Ch NexFET Pwr MOSFET A 595-CSD18534Q5ATThis 7.8 mΩ, 60 V, SON 5 × 6 mm NexFET™ power MOSFET is

CSD18534Q5AT, Texas Instruments, VSONP-8, 60V 100A

instock

CSD18534Q5AT, Texas Ins...

INR 0 INR 0

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FAIRCHILD SEMICONDUCTORS These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, pl

IFDL100N50F N Channel MOSFET FRFET 500V 100A TO 264 3

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IFDL100N50F N Channel M...

INR 225

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VISHAY Third generation Power MOSFETs from Vishay provide thedesigner with the best combination of fast switching,r

IRF9520 TO-220AB P-Channel VISHAY Power Mosfet

instock

IRF9520 TO-220AB P-Chan...

INR 17

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STM This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This

IRF830 MOSFET N-CH 500V 4.5A TO220AB

instock

IRF830 MOSFET N-CH 500...

INR 15

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international rectifiers Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

IRF3710 MOSFET N-CH 100V 57A TO220AB

instock

IRF3710 MOSFET N-CH 100...

INR 15

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INTERNATIONAL RECTIFIERS Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing te

IRF2804 75A 40V TO-220AB Power Mosfet

instock

IRF2804 75A 40V TO-220A...

INR 20

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INTERNATIONAL RECTIFIERS Advanced HEXFET® Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveex

IRF2807 75V 82A Power Mosfet

instock

IRF2807 75V 82A Power M...

INR 55

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doingter The DOPF4N65 is an N-channel Power MOSFET designed for high voltage and medium power switching applications. I

DOPF4N65 4A,650V N-CHANNEL POWER MOSFET

instock

DOPF4N65 4A,650V N-CHAN...

INR 9

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doingter This N-Channel MOSFET uses advanced Planar technology and design to provide excellent RDS(on) with low gate ch

DOPF2N65 650V 10A TO- 220F DOINGTER MOSFET

instock

DOPF2N65 650V 10A TO- 2...

INR 8

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INTERNATIONAL RECTIFIER Fourth Generation HEXFETs from InternationalRectifier utilize advanced processing techniques toachieve the l

IRF7103TRPBF 50V 3A Mosfet

instock

IRF7103TRPBF 50V 3A Mos...

INR 5

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ON SEMI SUPERSOT−3 N−Channel logic level enhancement mode power field effect transistors are produced using onsemi’s p

FDN337N Transistor N Channel SOT 23 3 ON SEMI

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FDN337N Transistor N Ch...

INR 3

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Doingter This P-Channel MOSFET by Doingter uses advanced trench technology and design to provide excellent RDS(on) with

Dod70p06 60v 70a P-channel Mosfet Doingter

instock

Dod70p06 60v 70a P-chan...

INR 15

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Infineon Technologies • N-channel • Depletion mode • dv /dt rated • Available with V GS(th) indicator on reel • Pb-free lead plating

BSP135H6327XTSA1 MOSFET N-CH 600V 120MA SOT223-4

instock

BSP135H6327XTSA1 MOSFET...

INR 9

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ON SEMI This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced low voltage POWERTRENCH process. It has been opti

FDN304P MOSFET P-CH 20V 2.4A SUPERSOT3 ONSEMI

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FDN304P MOSFET P-CH 20V...

INR 3

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NCE POWER The NCE0140K2 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. It

NCE0140K2N-Channel Enhancement Mode Power MOSFET WUXI NCE POWER

instock

NCE0140K2N-Channel Enha...

INR 9

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WUXI NCE POWER The NCE6080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate char

NCE6080K MOSFET TO-252-2L WUXI NCE POWER

instock

NCE6080K MOSFET TO-252...

INR 8.5

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JJM Features 30V,150ARDS(ON)<3.3mΩ @ VGS =10VRDS(ON)<6.5mΩ @ VGS =4.5V Advanced Trench Technology Provide

JMTK3003A 30V 150A TO-252 JJM

instock

JMTK3003A 30V 150A TO...

INR 5.5

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WUXI CS7N65F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which

CS7N65F A9R 650V 7A TO-220F WUXI

instock

CS7N65F A9R 650V 7A TO...

INR 10

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WXDH These N-channel enhancement mode power mosfets usedadvanced splite gate trench technology design, providedex

DSP032N08NA 85V 170A WXDH

instock

DSP032N08NA 85V 170A WX...

INR 22

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JJM Features  60V, 50A RDS(ON) <15mΩ @ VGS = 10V RDS(ON) <21mΩ @ VGS = 4.5V  Advanced Trench Technology  Provid

JMTK50N06B 60V 50A TO-252-3L JJM

instock

JMTK50N06B 60V 50A TO-2...

INR 6

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WXDH These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduct

F20N65 650V 20.0A MOSFET TO-220F BY WXDH

instock

F20N65 650V 20.0A MOSFE...

INR 22

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WXDH The F4N65 is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristi

F4N65 650V 4A TO-220F BY WXDH

instock

F4N65 650V 4A TO-220F ...

INR 6

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INFINEON The IR2110/IR2113 are high voltage, high speed power MOSFET andIGBT drivers with independent high and low sid

IR2110STRPBF -MOSFET BY INFINEON- 2.5A 10V -16-Lead SOIC

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IR2110STRPBF -MOSFET BY...

INR 40

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NCE Power- NCE N-Channel MOSFET -30V 80A TO252 The NCE3080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It

NCE3080K- WUXI NCE POWER-TO252-80A-30V

instock

NCE3080K- WUXI NCE POWE...

INR 6

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TOSHIBA MOSFETs PLN MOS 900V 1300m (VGS=10V) TO-220SIS1. Applications• Switching Voltage Regulators2. Features(1)

TK9A90E-TOSHIBA- MOSFET N-CH 900V 9A TO3P

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TK9A90E-TOSHIBA- MOSFET...

INR 41

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WXDH The D4N65 is an N-channel power MOSFET designed for high-voltage switching applications. Manufactured by UTC (

D4N65

instock

D4N65

INR 6

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SILAN SGT20T135QR1P7/PN/PT inverse IGBT employs Silan new Reverse Conducting technology, features low conduction los

SGT20T135QR1P7

instock

SGT20T135QR1P7

INR 43

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INFINEON Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extrem

IRFP064NPBF

instock

IRFP064NPBF

INR 40

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NCE POWER The NCE0125AK is a high-performance N-channel MOSFET designed for power management and switching applications.

NCE0125AK

instock

NCE0125AK

INR 9.5

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INFINEON The IRFP260NPBF is a high-power, N-channel MOSFET designed for high-efficiency switching applications. It feat

IRFP260NPBF

instock

IRFP260NPBF

INR 50

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INFINEON The IRF3205PBF is an N-channel MOSFET designed for high-speed switching applications. It features a low on-res

IRF3205PBF

instock

IRF3205PBF

INR 15

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INFINEON The IRF9540NPBF is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various

IRF9540NPBF

instock

IRF9540NPBF

INR 3.5

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JJM The JMTK50N06B is a N-channel power MOSFET designed for high-speed switching applications. It features a low o

JMTK50N06B

instock

JMTK50N06B

INR 6

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JJ MICROELECTRONICS The JMTL3407A is a P-Channel MOSFET designed for various electronic applications, particularly in power manage

JMTL3407A

instock

JMTL3407A

INR 0 INR 0

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INFINEON Advanced HEXFET® Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieve

IRF2807PBF

instock

IRF2807PBF

INR 35

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UTC The 12N65 is a high voltage power MOSFET from Doingter with part number as DOPF 12N65 and is designed to have

UTC 12N65L

instock

UTC 12N65L

INR 15

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UTC The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such a

UTC 10N65L

instock

UTC 10N65L

INR 11

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NCE DescriptionThe NCE0140K2 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gat

NCE0140K2

instock

NCE0140K2

INR 20

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SILAN MICRO SVG104R5NT(S) N-channel enhancement mode power MOS field effect transistor is manufactured using Silan's LVMOS

SVG104R5NT- TO220

instock

SVG104R5NT- TO220

INR 28

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MAPLESEMI MAPLESEMI 8N65 TO251 PACKAGE AVAIALBE IN STOCK

SLU8N65V

instock

SLU8N65V

INR 5

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INFINEON High-voltage super-junction MOSFET technology solutions. ... Designed with low Rth(j-c) for high-power applica

IRFB4410ZPBF

instock

IRFB4410ZPBF

INR 42

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JJM The JMTK50N06B is a high-performance N channel MOSFET designed for efficient power switching. With a voltage r

JMTK50N06B

instock

JMTK50N06B

INR 6

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JJM The JMTK50N03A is a high-performance P-channel MOSFET designed for efficient power switching applications. Wit

JMTK50N03A

instock

JMTK50N03A

INR 5

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CR MICRO SKD502T MOSFET is a N Channel MOSFET in TO220 Package.

SKD502T

instock

SKD502T

INR 21

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LONTEN LND20N65 Lonten N-channel 650V, 20A Power MOSFET :The Power MOSFET is fabricated using the V 650VDSSadvanced p

LND20N65

instock

LND20N65

INR 20

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UTC The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), lo

10N80L-TF1-T

instock

10N80L-TF1-T

INR 19

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INFINEON Optimized for high & low switching frequency in high-performance applications. Infineon - Driving decarbonizat

IRF3710PBF

instock

IRF3710PBF

INR 25

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LONTEN These N-Channel enhancement mode power field effect transistors are using shielded gate trench.

LSGE10R040HC

instock

LSGE10R040HC

INR 29

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LONTEN These N-Channel enhancement mode power field effect transistors are using shielded gate trench.

LSGE085R036

instock

LSGE085R036

INR 23

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TOSHIBA These high-voltage MOSFETs offer a drain-source voltage range of 250V up to 650V and a drain current range fro

TK4P60D,RQ

instock

TK4P60D,RQ

INR 10

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INFINEON The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of

IRF2807PBF

instock

IRF2807PBF

INR 30

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