Description

SUPERSOT−3 N−Channel logic level enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in−line power loss are needed in a very small outline surface mount package. Features • 2.2 A, 30 V ♦ RDS(on) = 0.065 @ VGS = 4.5 V ♦ RDS(on) = 0.082 @ VGS = 2.5 V • Industry Standard Outline SOT−23 Surface Mount Package Using Proprietary SUPERSOT−3 Design for Superior Thermal and Electrical Capabilities • High Density Cell Design for Extremely Low RDS(on) • Exceptional on−Resistance and Maximum DC Current Capability • This Device is Pb−Free and Halogen Free