Mumbai, India, 400004
This P-Channel MOSFET by Doingter uses advanced trench technology and design to provide excellent RDS(on) with a low gate charge. It can be used in various low voltage applications.Features:1) VDS=60V, ID=&0A, RDS(ON)<10mΩ @VGS=10V2) Low gate charge3) Green device available4) Advanced high cell density trench technology for ultra RDS(ON)5) Excellent package for good heat dissipation