Description
Product details
These N-channel enhanced vdmosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. 2 Features ● Fast switching ● Low on resistance(Rdson≤2.0mΩ) ● Low gate charge(Typ: 65nC) ● Low reverse transfer capacitances(Typ: 435pF) ● 100% single pulse avalanche energy test ● 100% ΔVDS test
