MOSFET by TOSHIBA
TK9A90E-TOSHIBA- MOSFET N-CH 900V 9A TO3P
INR 41
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Description
MOSFETs PLN MOS 900V 1300m (VGS=10V) TO-220SIS 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.0 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.9 mA)
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