Description

Product details

SVG104R5NT(S) N-channel enhancement mode power MOS field effect transistor is manufactured using Silan's LVMOS process technology. The advanced process and cell structure enable this product to have low on-resistance, excellent switching performance and high avalanche breakdown tolerance. This product can be widely used in the power management field of uninterruptible power supply and inverter system. characteristic • Low gate charge • Low reverse transfer capacitance • Fast switching • Improved dv/dt capability

Keywords

• cell structure
• Fast switching
• inverter system
• Low gate charge
• dv/dt capability
• advanced process
• power management field
• LVMOS process technology
• MOS field effect transistor
• uninterruptible power supply
• excellent switching performance
• Low reverse transfer capacitance
• N-channel enhancement mode power
• high avalanche breakdown tolerance