MOSFET by SILAN MICRO
SVG104R5NT- TO220
INR 28
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Description
SVG104R5NT(S) N-channel enhancement mode power MOS field effect transistor is manufactured using Silan's LVMOS process technology. The advanced process and cell structure enable this product to have low on-resistance, excellent switching performance and high avalanche breakdown tolerance. This product can be widely used in the power management field of uninterruptible power supply and inverter system. characteristic • Low gate charge • Low reverse transfer capacitance • Fast switching • Improved dv/dt capability
Keywords
cell structure•Fast switching•inverter system•Low gate charge•dv/dt capability•advanced process•power management field•LVMOS process technology•MOS field effect transistor•uninterruptible power supply•excellent switching performance•Low reverse transfer capacitance•N-channel enhancement mode power•high avalanche breakdown tolerance
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