Description

Product details

The SGT50T65FD1PN/P7 Insulated Gate Bipolar Transistor (IGBT) is manufactured using Silan Microelectronics' latest fourth-generation Field Stop (Field Stop IV) process. Featuring low conduction and switching losses, this product is suitable for applications such as welding machines, UPS, SMPS, and PFC.

Keywords

• Silicon microelectronics power transistor
• Low loss high-voltage IGBT module
• IGBT for welding machines and UPS
• 50A 650V Insulated Gate Bipolar Transistor