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Features • 2.2 A, 30 V ♦ RDS(on) = 0.065 @ VGS = 4.5 V ♦ RDS(on) = 0.082 @ VGS = 2.5 V • Industry Standard Outline SOT−23 Surface Mount Package Using Proprietary SUPERSOT−3 Design for Superior Thermal and Electrical Capabilities • High Density Cell Design for Extremely Low RDS(on) • Exceptional on−Resistance and Maximum DC Current Capability • This Device is Pb−Free and Halogen Free", "price": 3.0, "discountamount": 0.0, "currencycode": "INR", "priority": 1000000, "isfreeshipmentavailable": false, "shipmentduration": 1, "_keywords": [ "halogen free", "superior thermal", "fast switching", "fdn337n transistor", "proprietary supersot3 design", "battery powered circuits", "low voltage applications", "minimize onstate resistance", "high density process" ], "isarchived": false, "isavailable": true, "applicationid": null, "productindex": 212, "imageuri": "https://productimages.withfloats.com/actual/6824774c3052f3ae58c6880a.png", "tileimageuri": "https://productimages.withfloats.com/tile/6824774c3052f3ae58c6880a.png", "images": null, "totalqueries": 0, "gpid": null, "groupproductid": null, "createdon": "2025-05-14T10:58:19.498Z", "updatedon": "2025-05-14T10:58:19.498Z", "buyonlinelink": null, "producturl": "http://WWW.BINARYSEMICONDUCTORS.COM/products/fdn337n-transistor-n-channel-sot-23-3-on-semi/212", "availableunits": -1.0, "iscodavailable": false, "isprepaidonlineavailable": false, "maxcodorders": 0, "maxprepaidonlineorders": 0, "uniquepaymenturl": null, "brandname": "ON SEMI", "category": "MOSFET", "tags": [ "FDN337N", "ON SEMI", "FDN337N DISTRIBUTOR IN INDIA", "FDN337N DISTRIBUTOR IN MUMBAI", "ON SEMI", "ON SEMI DISTRIBUTOR IN INDIA", "FDN337N DATASHEET" ], "variants": false, "keyspecification": null, "otherspecifications": null, "pickupaddressreferenceid": null, "paymenttype": "None", "producttype": "products", "hsncode": null, "gstslab": 0.001, "isnotforsale": false }, { "_id": "66a38bb35644f12390216bb5", "fptag": "BINARYSEMICONDUCTOR", "merchantname": null, "customwidgets": null, "externalsourceid": null, "name": "SVG104R5NT- TO220", "description": "SVG104R5NT(S) N-channel enhancement mode power MOS field effect transistor is manufactured using Silan's LVMOS process technology. The advanced process and cell structure enable this product to have low on-resistance, excellent switching performance and high avalanche breakdown tolerance.\n\nThis product can be widely used in the power management field of uninterruptible power supply and inverter system.\n\n\ncharacteristic\n\n• Low gate charge\n• Low reverse transfer capacitance\n• Fast switching\n• Improved dv/dt capability", "price": 28.0, "discountamount": 0.0, "currencycode": "INR", "priority": 1000000, "isfreeshipmentavailable": false, "shipmentduration": 7, "_keywords": [ "cell structure", "Fast switching", "inverter system", "Low gate charge", "dv/dt capability", "advanced process", "power management field", "LVMOS process technology", "MOS field effect transistor", "uninterruptible power supply", "excellent switching performance", "Low reverse transfer capacitance", "N-channel enhancement mode power", "high avalanche breakdown tolerance" ], "isarchived": false, "isavailable": true, "applicationid": null, "productindex": 72, "imageuri": "https://productimages.withfloats.com/actual/66a38bb3b347d4b88162d515.jpg", "tileimageuri": "https://productimages.withfloats.com/tile/66a38bb3b347d4b88162d515.jpg", "images": null, "totalqueries": 0, "gpid": null, "groupproductid": null, "createdon": "2024-07-26T11:42:43.122Z", "updatedon": "2024-07-26T11:42:43.122Z", "buyonlinelink": null, "producturl": "http://WWW.BINARYSEMICONDUCTORS.COM//svg104r5nt-to220/72", "availableunits": -1.0, "iscodavailable": false, "isprepaidonlineavailable": false, "maxcodorders": 0, "maxprepaidonlineorders": 0, "uniquepaymenturl": null, "brandname": "SILAN MICRO", "category": "MOSFET", "tags": null, "variants": false, "keyspecification": null, "otherspecifications": null, "pickupaddressreferenceid": "", "paymenttype": "None", "producttype": "products", "hsncode": null, "gstslab": 0.001, "isnotforsale": false }, { "_id": "6a8d932c89284050f96dec1e", "fptag": "BINARYSEMICONDUCTOR", "merchantname": null, "customwidgets": null, "externalsourceid": null, "name": "SVF3878PN SILAN MICROELECTRONICS", "description": "SVF3878PN is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell'™ structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.\n\n|SVF3878PN|SVF3878PN DATASHEET|SVF3878PN SILAN MICROELECTRONICS|SILAN MICROELECTRONICS distributor in india |SILAN MICROELECTRONICS distributor in mumbai |SILAN MICROELECTRONICS distributor near me|SVF3878PN reseller in india|SVF3878PN reseller in mumbai|SVF3878PN reseller near me|", "price": 0.0, "discountamount": 0.0, "currencycode": "INR", "priority": 1000000, "isfreeshipmentavailable": false, "shipmentduration": 0, "_keywords": [ "H-bridge PWM motor driver component", "DC-DC converter switching transistor", "AC-DC power supply MOSFET module", "Low on-resistance power transistor", "Silan SVF3878PN VDMOS transistor", "High efficiency N-channel power MOSFET" ], "isarchived": false, "isavailable": true, "applicationid": null, "productindex": 356, "imageuri": "https://bizimages.withfloats.com/actual/6a0b458e0ef24889bcf2d91b181a380a.jpg", "tileimageuri": "https://bizimages.withfloats.com/tile/6a0b458e0ef24889bcf2d91b181a380a.jpg", "images": null, "totalqueries": 0, "gpid": null, "groupproductid": null, "createdon": "2026-08-25T13:05:48.727Z", "updatedon": "2026-08-25T13:05:48.727Z", "buyonlinelink": null, "producturl": "http://WWW.BINARYSEMICONDUCTORS.COM//svf3878pn-silan-microelectronics/356", "availableunits": -1.0, "iscodavailable": false, "isprepaidonlineavailable": true, "maxcodorders": 0, "maxprepaidonlineorders": 0, "uniquepaymenturl": null, "brandname": null, "category": "INTEGRATED CIRCUITS", "tags": null, "variants": false, "keyspecification": null, "otherspecifications": null, "pickupaddressreferenceid": null, "paymenttype": "AssuredPurchase", "producttype": "products", "hsncode": "", "gstslab": 18.0, "isnotforsale": false }, { "_id": "6a6479097159d8daddc08024", "fptag": "BINARYSEMICONDUCTOR", "merchantname": null, "customwidgets": null, "externalsourceid": null, "name": "IRF4905PBF INFINEON", "description": "Fifth Generation HEXFET Power MOSFETs utilizes advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that\nHEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for\nuse in a wide variety of other applications.\nThe TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to\napproximately 50 watts. The low thermal resistance and low package cost of TO-220 contributes to the wide\nacceptance throughout the industry. \n\n|IRF4905PBF|IRF4905PBF INFINEON|IRF4905PBF DATASHEET|IRF4905PBF|INFINEON|INFINEON DISTRIBUTOR IN INDIA|INFINEON DISTRIBUTOR IN MUMBAI|INFINEON DISTRIBUTOR NEAR ME|IRF4905PBF RESELLER IN INDIA|IRF4905PBF RESELLER IN MUMBAI|IRF4905PBF RESELLER NEAR ME|", "price": 0.0, "discountamount": 0.0, "currencycode": "INR", "priority": 1000000, "isfreeshipmentavailable": false, "shipmentduration": 0, "_keywords": [ "Fifth generation HEXFET power MOSFET 2. Low on resistance power MOSFET 3. 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The device integrates a main \nswitch and a synchronous rectifier for high \nefficiency without an external Schottky diode. It is \nideal for powering portable equipment that runs \nfrom a single cell Lithium-Ion (Li+) battery. The \noutput voltage can be regulated as low as 0.6V. \nThe M3406 can also run at 100% duty cycle for \nlow dropout operation, extending battery life in \nportable system. This device offers two operation \nmodes, PWM control and PFM Mode switching \ncontrol, which allows a high efficiency over the \nwider range of the load. \nThe M3406 is offered in a low profile 5-pin, SOT \npackage, and is available in an adjustable version. 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It allows for two N-channel MOSFETs to be controlled in half-bridge or synchronous buck configuration based topologies. Its 3-A peak source and sink current along with low pull-up and pull-down resistance allows the UCC27282 to drive large power MOSFETs with minimum switching losses during the transition of the MOSFET Miller plateau. \nSince the inputs are independent of the supply voltage, UCC27282 can be used in conjunction with both analog and digital controllers.\nThe input pins as well as the HS pin are able to tolerate significant negative voltage, which improves system robustness. Input interlock further improves robustness and system reliability in high noise applications. The enable and disable functionality provides additional system flexibility by reducing power consumption by the driver and responds to fault events within the system. 5-V UVLO allows systems to operate at lower bias voltages, which is necessary in many high frequency applications and improves system efficiency in certain operating\nmodes. \nSmall propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency.\nUnder voltage lockout (UVLO) is provided for both the high-side and low-side driver stages forcing the outputs low if the VDD voltage is below the specified threshold. An integrated bootstrap diode eliminates the need for an external discrete diode in many\napplications, which saves board space and reduces system cost. 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The 25Q series offers flexibility and performance well beyond ordinary Serial Flash devices.\nThey are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI (XIP) and storing\nvoice, text and data. The device operates on 2.7V to 3.6V power supply with current consumption as low\nas 1µA for power-down.\nThe W25Q32JV array is organized into 16,384 programmable pages of 256-bytes each. Up to 256 bytes\ncan be programmed at a time. Pages can be erased in groups of 16 (4KB sector erase), groups of 128\n(32KB block erase), groups of 256 (64KB block erase) or the entire chip (chip erase). The W25Q32JV has\n1,024 erasable sectors and 64 erasable blocks respectively. The small 4KB sectors allow for greater\nflexibility in applications that require data and parameter storage. 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