Description

This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced low voltage POWERTRENCH process. It has been optimized for battery power management applications. Features • −2.4 A, −20 V ♦ RDS(ON) = 52 m @ VGS = −4.5 V ♦ RDS(ON) = 70 m @ VGS = −2.5 V ♦ RDS(ON) = 100 m @ VGS = −1.8 V • Fast Switching Speed • High Performance Trench Technology for Extremely Low RDS(ON) • SUPERSOT−23 provides Low RDS(ON) and 30% Higher Power Handling Capability than SOT23 in the same Footprint • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Battery Management • Load Switch • Battery Protection