Description

These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink. TO-220F series comply with UL standards (File ref:E252906). 2 Features ● Fast switching ● ESD improved capability ● Low on resistance(Rdson≤0.50Ω) ● Low gate charge(Typ: 58nC) ● Low reverse transfer capacitances(Typ: 20pF) ● 100% single pulse avalanche energy test ● 100% ΔVDS test 3 Applications ● Used in various power switching circuit for system miniaturization and higher efficiency. ● Power switch circuit of electron ballast and adaptor