Description

Product details

The AT45DB 161E is a 2.3 V or 2.5 V minimum, serial-interface sequential access Flash memory ideally suited for a wide variety of digital voice, image, program code, and data storage applications. The AT45DB161E also supports the RapidS serial interface for applications requiring very high speed operation. Its 17,301,504 bits of memory are organized as 4,096 pages of 512 bytes or 528 bytes each. In addition to the main memory, the AT45DB161E also contains two SRAM buffers of 512/528 bytes each. The buffers allow receiving of data while a page in the main memory is being reprogrammed. Interleaving between both buffers can dramatically increase a system's ability to write a continuous data stream. Also, the SRAM buffers can be used as additional system scratch pad memory, and EPROM emulation (bit or byte alterability) can be easily handled with a self-contained three step read-modify-write operation. Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel interface, this device uses a serial interface to sequentially access its data. The simple sequential access dramatically reduces active pin count, facilitates simplified hardware layout, increases system reliability, minimizes switching noise, and reduces package size. The device is optimized for use in many commercial and industrial applications where high-density, low-pin count, low-voltage, and low-power are essential. To allow for simple in-system re-programmability, the AT45DB161E does not require high input voltages for programming. The device operates from a single 2.3 V to 3.6 V or 2.5 V to 3.6 V power supply for the erase and program and read operations. The AT45DB161E is enabled through the Chip Select pin (CS) and accessed via a Three-wire interface consisting of the Serial Input (SI), Serial Output (SO), and the Serial Clock (SCK).