by TOSHIBA
2CS5200N TOSHIBA Silicon NPN Power Transistor
INR 38
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Description
·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) ·Complement to Type 2SA1943N ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
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