SVG104R5NT(S) N-channel enhancement mode power MOS field effect transistor is manufactured using Silan's LVMOS process technology. The advanced process and cell structure enable this product to have low on-resistance, excellent switching performance and high avalanche breakdown tolerance.
This product can be widely used in the power management field of uninterruptible power supply and inverter system.
characteristic
• Low gate charge
• Low reverse transfer capacitance
• Fast switching
• Improved dv/dt capability
#SVG104R5NT-TO220 #MOSFET #SVG104R5NT-TO220INMUMBAI #SVG104R5NT-TO220ININDIA #SVG104R5NT-TO220MOSFET #SVG104R5NT-TO220DISTRIBUTORININDIA
