mosfet

Fifth Generation HEXFET Power MOSFETs utilizes advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of other applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of TO-220 contributes to the wide acceptance throughout the industry. |IRF4905PBF|IRF4905PBF INFINEON|IRF4905PBF DATASHEET|IRF4905PBF|INFINEON|INFINEON DISTRIBUTOR IN INDIA|INFINEON DISTRIBUTOR IN MUMBAI|INFINEON DISTRIBUTOR NEAR ME|IRF4905PBF RESELLER IN INDIA|IRF4905PBF RESELLER IN MUMBAI|IRF4905PBF RESELLER NEAR ME|

Dual-channel built-in power MOS full-bridge driver; supports forward, reverse, stop, and braking functions; ultra-low standby and operating current; low on-resistance (1.6Ω).Max continuous output current up to 1.8A per channel, with a peak of 2.5AWide operating voltage range Available in SOP-16 package